Dendritic Growth in Si1−xGex Melts
نویسندگان
چکیده
We investigated the types of dendrites grown in Si1−xGex (0 < x 1) melts, and also initiation dendrite growth during unidirectional Si1-xGex alloys. is a semiconductor alloy with completely miscible-type binary phase diagram. Therefore, alloys are promising for use as epitaxial substrates electronic devices owing to fact that their band gap lattice constant can be tuned by selecting proper composition, thermoelectric applications at elevated temperatures. On other hand, regarding fundamentals solidification, some phenomena solidification process have not been clarified completely. Dendrite well-known phenomenon, which appears processes various materials. However, details melts yet reported. attempted observe dendritic over wide range composition an situ observation technique. It was found twin-related appear melts. faceted directional before instability crystal/melt interface occurs, when growing crystal contains parallel twin boundaries.
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ژورنال
عنوان ژورنال: Crystals
سال: 2021
ISSN: ['2073-4352']
DOI: https://doi.org/10.3390/cryst11070761